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UnionSens technologies Co,.Ltd
Pressure sensor, Displacement,Wireless Sensor/Transducer and Transient recorder manufacturer
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NVP82H high temperature dynamic pressure sensor, high frequency dynamic pressure

NVP82H high temperature dynamic pressure sensor, high frequency dynamic pressure

Place of Origin : china
Brand Name : unionsens
Model Number : nVp82H
Price : 1 usd/ pcs
Delivery Time : 5-10 days
Payment Terms : 100%T/T, paypal
Supply Ability : 10000pcs/year
MOQ : 1
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High frequency and high temperature pressure sensor of UnionSens production is based on the SOI technology, the sensitive element using MEMS technology, the application of advanced energy oxygen ion implanted SIMOX (Separation by Implantation of Oxygen) technology, the single crystal silicon layer below the surface forming buried silicon dioxide layer, ensuring the sensor can work in high temperature of 250 ℃, 20KHz high frequency and under high pressure.. Sealing structure, sealing by laser welding technology, avoids the aging phenomena of O shape under the environment of high temperature sealing ring, improves the stability and reliability of sensor. Mainly used in some high dynamic pressure test.

NVP82 type high temperature pressure sensor usingMEMSTechnology, 2000 ℃ high temperature instantaneous impact, integrated flush diaphragm pressure sensor core body, and the beam membrane structure design is advanced, which has the advantages of high temperature resistance and high temperature instantaneous impact, dynamic frequency response of high (up to1MHz), ultra high range, and high overload (maximum Man Liangcheng20Times) etc.. The high temperature pressure sensor has been widely used in aerospace, military, petrochemical, metallurgy, electric power, shipbuilding, automobile, medicine and other fields for measuring the pressure of the fluid at high temperature.

MEMS high temperature resistant pressure sensitive SOIChip

Can work for a long time in high temperature of 200 ℃, 2000 ℃ high temperature instantaneous impact resistance

Gao Liangcheng, high overload, high frequency response

High sensitivity, good long-term stability

Wide temperature zone temperature compensation, can work for a long time in the condition of 200 ℃, installation of water - cooled type structure, high temperature 1200 ℃

Constant current, constant voltage power supply optional

Main performance index

Measurement of medium

All kinds of liquids or gases is compatible with silicon, stainless steel, glass

Range

0 ~ 500KPa ...... 100MPa

Nonlinear

0.05%FS

0.15%FS

0.3%FS

0.5%FS

Hysteresis, repeatability

0.03%FS

0.1%FS

0.2%FS

0.3%FS

Precision

0.1%FS

0.2%FS ,

0.5%FS ( Typ )

1%FS

Overload pressure

≥ 200%FS

The input impedance

1K Omega ~6k Omega

Output impedance

1K Omega ~6k Omega

Long term stability

Be better than 0.2%FS/ Years

Vibration

5 ~ 1000Hz , amplitude 2mm , X , Y , Z Per to 30 Minutes, less than the output change 0.1%FS

To attack

50g : X , Y , Z Three, per to 20ms The output change is less than0.1%FS

Electrical characteristics

Full scale output

80mV ± 20mV

Zero output

≤ ± 2mV

Power supply:

1.5mA , 5mA Or 9V

Electrical interface

Self locking structure, or other

Insulation resistance

100M Omega (50VDC)

Environmental characteristics

The zero temperature coefficient

0.03%FS/ C ( Typical )

Temperature sensitivity coefficient

0.03%FS/ C (typical)

Operating temperature range

-40 ~ 200 C

The compensation temperature range

-2 5 C ~ 125 C,

-2 5 C ~ 175 C

Relative humidity

%0 ~ 85%

Structure performance

The pressure interface

M20 * 1.5 , M12 * 1 , or other

Shell and interface materials

1Cr18Ni9TI

Weight

About 200g


Application of SIMOX technology is used to fabricate the buried layer of silicon dioxide, solves the problem that traditional silicon force sensing chip is higher than 80 ℃ when the working temperature for PN junction leakage current increase and the failure. At the same time, through the Ti Pt Au beam lead system, to ensure the high reliability in the lead. Through the MEMES process strict requirements, can produce a range of 150MPa, ultra high pressure high temperature pressure sensor chip operating temperature of 250 ℃, solving the problem of pressure measurement under high temperature and pressure.


Through high energy oxygen ion implantation (SIMOX) technique, the buried silicon oxide layer is formed on the thin layer of monocrystalline silicon, in isolation as the top silicon layer measuring circuit and as between bulk silicon supported by high temperature caused by leakage current. SIMOX technology is the advanced [14-16] technology commercialization of SOI material preparation methods at present, the principle of [17] SIMOX to Ibis, the formation of very simple, concrete steps are used in high energy O+ (150-300keV) into the silicon substrate, and the injection energy of ion current density, in 150keV is 2.6 × 1018/cm2, at the time of 300keV is 1.3 × 1018/cm2. After the injection samples annealed at 1300 ℃ for 6 hours, on the formation of SOI structure. When injected into the substrate heating, density has a corresponding critical temperature for each ion flow, lining temperature just above the critical temperature, injection in order to maintain the crystallinity, crystal quality was better after annealing. In conclusion, oxygen ions to the wafer surface and the formation of SiO2 buried layer, all conditions should ensure that there is a layer of monocrystalline silicon oxide.



Product Tags:

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high temperature dynamic pressure sensor

      
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